Low-aberration einzel lens for a focused-ion-beam systemKURIHARA, K.Japanese journal of applied physics. 1985, Vol 24, Num 2, pp 225-230, issn 0021-4922Article

Caractéristiques d'émittance des faisceaux ioniquesRUDYAK, YU. V.Žurnal tehničeskoj fiziki. 1984, Vol 54, Num 7, pp 1334-1337, issn 0044-4642Article

First evidence of tyre debris characterization at the nanoscale by focused ion beamMILANI, M; PUCILLO, F. P; BALLERINI, M et al.Materials characterization. 2004, Vol 52, Num 4-5, pp 283-288, issn 1044-5803, 6 p.Article

Self-aligned broad-beam ion opticsLOSSY, R; ENGEMANN, J; ÜNAL, N et al.I.E.E.E. transactions on electron devices. 1992, Vol 39, Num 2, pp 444-447, issn 0018-9383Article

RELAXATION D'UN FAISCEAU IONIQUE INJECTE DANS LE PLASMA TRANSVERSALEMENT A UN CHAMP MAGNETIQUEBORISENKO AG; KIRICHENKO GS.1972; ZH. EKSPER. TEOR. FIZ., PIS'MA REDAKC.; S.S.S.R.; DA. 1972; VOL. 16; NO 6; PP. 349-352; BIBL. 12 REF.Serial Issue

NEUTRALISED ION BEAM MILLING: ANOMALOUS SPUTTER YIELD BEHAVIOURPITT CW; SPINGH SP.1980; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1980; VOL. 16; NO 19; PP. 721-722; BIBL. 12 REF.Article

A NEW PRODUCTION TECHNIQUE: ION MILLING. II: APPLICATIONSBOLLINGER D; FINK R.1980; SOLID STATE TECHNOL.; ISSN 0038-111X; USA; DA. 1980; VOL. 23; NO 12; PP. 97-103; BIBL. 10 REF.Article

Focused ion beams in microelectronic fabricationDOHERTY, J. A; WARD, B. W; KELLOGG, E. M et al.IEEE transactions on components, hybrids, and manufacturing technology. 1983, Vol CHMT 6, Num 3, pp 329-333, issn 0148-6411Article

Focused Ion Beam : A Versatile Technique for the Fabrication of Nano-DevicesSANTSCHI, Christian; PRZYBYLSKA, Joanna; GUILLAUMEE, Mickael et al.Praktische Metallographie. 2009, Vol 46, Num 3, pp 154-156, issn 0032-678X, 3 p.Article

Automated X-ray elemental analysis in three dimensions using a dual beam-focused Ion beam systemSCHAFFER, Miroslava; WAGNER, Julian; SCHRÖTTNER, Hartmuth et al.Praktische Metallographie. 2007, Vol 44, Num 5, pp 248-250, issn 0032-678X, 3 p.Article

Energie et flux d'énergie des ondes avec une phase complexe dans des milieux avec une «fenêtre de transparence»EFIMOV, S. P; YUDIN, L. A.Izvestiâ vysših učebnyh zavedenij. Radiofizika. 1984, Vol 27, Num 6, pp 690-696, issn 0021-3462Article

Characteristics of intense ion beam in pinch reflex diodeYOSHINOUCHI, A; OZAKI, T; MIYAMOTO, S et al.Japanese journal of applied physics. 1983, Vol 22, Num 8, pp 485-487, issn 0021-4922Article

Génération de flux intenses d'ions négatifsAGAFONOV, A. V; KOLOMENSKIJ, A. A; LEBEDEV, A. N et al.ZETF. Pis′ma v redakciû. 1983, Vol 84, Num 6, pp 2040-2045, issn 0044-4510Article

Fabrication and modification of photonic structures with focused ion beamCALLEGARI, Victor; NELLEN, Philipp M; BRÖNNIMANN, Rolf et al.Praktische Metallographie. 2007, Vol 44, Num 5, pp 239-243, issn 0032-678X, 5 p.Article

Proceedings of the 14th International Conference on Surface Modification of Materials by Ion Beams, SMMIB'05, Kuşadasi, 4-9 September, 2005OZTARHAN, Ahmet; BAGLIN, John E. E; BROWN, Ian G et al.Surface & coatings technology. 2007, Vol 201, Num 19-20, issn 0257-8972, 671 p.Conference Proceedings

Low energy nuclear cross sections in metalsKASAGI, Jirohta.Surface & coatings technology. 2007, Vol 201, Num 19-20, pp 8574-8578, issn 0257-8972, 5 p.Conference Paper

InstrumentationTAPPER, U. A. S; MALMQVIST, K. G.Analytical chemistry (Washington, DC). 1991, Vol 63, Num 14, issn 0003-2700, 715 A-725 AArticle

Study of beam divergence of low-energy (1-3 keV) ion sourceYATSU, K; AOKI, S; HORIE, A et al.Japanese journal of applied physics. 1983, Vol 22, Num 6, issn 0021-4922, 1071Article

THE DEVELOPMENT OF SURFACE MORPHOLOGY DURING SPUTTERING WITH SPATIALLY NON-UNIFORM ION BEAMSNOBES MJ; WEBB RP; CARTER G et al.1980; RAD. EFFECTS; GBR; DA. 1980; VOL. 50; NO 3-6; PP. 133-138; BIBL. 14 REF.Article

A NEW PRODUCTION TECHNIQUE: ION MILLINGBOLLINGER D; FINK R.1980; SOLID STATE TECHNOL.; ISSN 0038-111X; USA; DA. 1980; VOL. 23; NO 11; PP. 79-84; BIBL. 11 REF.Article

ETCHED PROFILE OF SI BY ION-BOMBARDMENT-ENHANCED ETCHINGMORIWAKI K; ARITOME H; NAMBA S et al.1981; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1981; VOL. 20; NO 7; PP. 1305-1309; BIBL. 7 REF.Article

MULTI-APERTURE ION SOURCE WITH A DEFLECTABLE FOCUSED BEAM FOR COMPOSITIONAL CONTROL IN SPUTTER DEPOSITIONSMITS JW.1981; J. VAC. SCI. TECHNOL.; ISSN 0022-5355; USA; DA. 1981; VOL. 19; NO 3; PP. 704-708; BIBL. 11 REF.Article

Nanometer-scale columns in GaAs fabricated by angled chlorine ion-beam-assisted etchingGOODHUE, W. D; PANG, S. W; JOHNSON, G. D et al.Applied physics letters. 1987, Vol 51, Num 21, pp 1726-1728, issn 0003-6951Article

Proceedings of the 15th International Conference on Surface Modification of Materils by Ion BeamsKOTHARI, D. C; BAGLIN, John E. E; ENSINGER, W et al.Surface & coatings technology. 2009, Vol 203, Num 17-18, issn 0257-8972, 472 p.Conference Proceedings

Lonenstrahlpräparation : ein treffliches Werkzeug zur Charakterisierung der Zwischenprodukte des schmelzpulvermetallurgischen Aluminiumschäumverfahrens = Ion Beam Preparation : an Excellent Instrument for the Characterization of the Byproducts of the Melt Powder Metallurgical Aluminum Foam ProcessHÖHN, Sören; OBENAUS, Peter; HOHLFELD, Jörg et al.Praktische Metallographie. 2008, Vol 45, Num 3, pp 122-134, issn 0032-678X, 13 p.Article